Effects of Solution History on Sol-Gel Processed Tin-Oxide Thin-Film Transistors

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dc.contributor.authorBoratto, Miguel H. [UNESP]
dc.contributor.authorScalvi, Luis V. A. [UNESP]
dc.contributor.authorGoncharova, Lyudmila V.
dc.contributor.authorFanchini, Giovanni
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversity of Western Ontario
dc.date.accessioned2018-12-11T16:43:36Z
dc.date.available2018-12-11T16:43:36Z
dc.date.issued2016-01-01
dc.description.abstractAntimony-doped tin-oxide (SbTO) thin films deposited by solution processing methods represent a promising avenue toward low-cost transparent and flexible electronics, but reproducibility and performance homogeneity of devices prepared from these thin films have been seldom investigated. In this study, the role of sol-gel precursor aging is investigated by comparing SbTO thin-film transistors (TFT) fabricated from two different sol-gel solutions: the first one was aged for 4 years, whereas the second was prepared freshly. For each of the solutions, a set of TFT was assembled on the same chip, to investigate the distinct roles of aging and sample inhomogeneity on the electronic and transport properties of SbTO. Higher electron mobility, but lower on/off ratios, was found in TFTs assembled from freshly prepared solution, an effect that may be assigned to larger size of SbTO grains. This study demonstrates the critical role of the solution “history” in determining the properties and reproducibility of SbTO TFTs, over other factors, including local film inhomogeneity and local fluctuations of the annealing temperature.en
dc.description.affiliationPhysics Department S�o Paulo State University - UNESP
dc.description.affiliationPost-Graduate Program in Materials Science and Technology S�o Paulo State University - UNESP
dc.description.affiliationDepartment of Physics & Astronomy University of Western Ontario
dc.description.affiliationCentre of Advanced Materials and Biomaterials Research (CAMBR) University of Western Ontario
dc.description.affiliationUnespPhysics Department S�o Paulo State University - UNESP
dc.description.affiliationUnespPost-Graduate Program in Materials Science and Technology S�o Paulo State University - UNESP
dc.description.sponsorshipCanada Foundation for Innovation
dc.description.sponsorshipNatural Sciences and Engineering Research Council of Canada
dc.format.extent4000-4006
dc.identifierhttp://dx.doi.org/10.1111/jace.14459
dc.identifier.citationJournal of the American Ceramic Society, v. 99, n. 12, p. 4000-4006, 2016.
dc.identifier.doi10.1111/jace.14459
dc.identifier.issn1551-2916
dc.identifier.issn0002-7820
dc.identifier.scopus2-s2.0-84983406484
dc.identifier.urihttp://hdl.handle.net/11449/168913
dc.language.isoeng
dc.relation.ispartofJournal of the American Ceramic Society
dc.relation.ispartofsjr0,950
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectperformance degradation
dc.subjectSol-gel processing
dc.subjectThin-film transistors
dc.subjecttin oxide
dc.titleEffects of Solution History on Sol-Gel Processed Tin-Oxide Thin-Film Transistorsen
dc.typeArtigo

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