Laser stimulated light reflection for TeO2-WO 3-Bi2O3 thin films with incorporated Si nanoparticles

Página do item simplificado
dc.contributor.authorKassab, L. P R [UNESP]
dc.contributor.authorCamilo, M. E.
dc.contributor.authorDe Assumpção, T. A A
dc.contributor.authorMyronchuk, G. L.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionSolid State Physics
dc.date.accessioned2014-05-27T11:29:47Z
dc.date.available2014-05-27T11:29:47Z
dc.date.issued2013-06-26
dc.description.abstractA novel method of preparation of the Si nanoparticles (NPs) incorporated in tellurite TeO2-WO3-Bi2O3 (TWB) thin films is proposed. This mew method applies RF magnetron sputtering technique at room temperature. The incorporation of Si NP was confirmed by transmission electron microscopy (TEM); isolated Si NPs with diameters of around 6 nm are observed. Energy dispersive X-ray spectroscopy (EDS) was performed during TEM analysis in order to confirm the presence of Si NP and also the other elements of the thin film. The thin films are explored with respect to the photoinduced changes of the reflectivity within the 400-65 nm spectra range using a 10 ns pulsed Nd:YAG with power densities varying up to 400 MW/cm2 and beam diameter within the 3-5 mm range. The observed processes are analyzed within a framework of trapping level conceptions for the Si NP. The possible application of the discovered materials as optical sensitive sensors is proposed. © 2013 Elsevier B.V.en
dc.description.affiliationLaboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos Faculdade de Tecnologia de São Paulo CEETEPS/UNESP, São Paulo, SP
dc.description.affiliationDepartamento de Engenharia de Sistemas Eletrônicos Escola Politécnica da USP, São Paulo, SP
dc.description.affiliationEastern Ukrainian University Solid State Physics, Voli 13, Lutsk
dc.description.affiliationUnespLaboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos Faculdade de Tecnologia de São Paulo CEETEPS/UNESP, São Paulo, SP
dc.format.extent99-105
dc.identifierhttp://dx.doi.org/10.1016/j.jnoncrysol.2013.05.033
dc.identifier.citationJournal of Non-Crystalline Solids, v. 376, p. 99-105.
dc.identifier.doi10.1016/j.jnoncrysol.2013.05.033
dc.identifier.issn0022-3093
dc.identifier.scopus2-s2.0-84879214408
dc.identifier.urihttp://hdl.handle.net/11449/75714
dc.identifier.wosWOS:000323874100015
dc.language.isoeng
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.ispartofjcr2.488
dc.relation.ispartofsjr0,722
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectOptical features of nanoparticles
dc.subjectPhotoinduced optical effects
dc.subjectEnergy dispersive X ray spectroscopy
dc.subjectOptical effects
dc.subjectOptical features
dc.subjectPhotoinduced change
dc.subjectRF magnetron sputtering technique
dc.subjectRoom temperature
dc.subjectSensitive sensors
dc.subjectTransmission electron microscopy (TEM)
dc.subjectLight reflection
dc.subjectMagnetron sputtering
dc.subjectNanoparticles
dc.subjectTellurium compounds
dc.subjectThin films
dc.subjectTransmission electron microscopy
dc.subjectX ray spectroscopy
dc.subjectSilicon
dc.titleLaser stimulated light reflection for TeO2-WO 3-Bi2O3 thin films with incorporated Si nanoparticlesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
unesp.author.orcid0000-0002-6795-5712[1]
unesp.author.orcid0000-0001-8597-7512[3]

Arquivos

Coleções

Artigos