Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

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dc.contributor.authorBarbosa, Martin S. [UNESP]
dc.contributor.authorBalke, Nina
dc.contributor.authorTsai, Wan-Yu
dc.contributor.authorSantato, Clara
dc.contributor.authorOrlandi, Marcelo O. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionPolytech Montreal
dc.contributor.institutionOak Ridge Natl Lab
dc.date.accessioned2020-12-10T19:59:50Z
dc.date.available2020-12-10T19:59:50Z
dc.date.issued2020-05-07
dc.description.abstractThe structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance.en
dc.description.affiliationUniv Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP, Brazil
dc.description.affiliationPolytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada
dc.description.affiliationOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
dc.description.affiliationUnespUniv Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFluid Interface Reactions, Structures and Transport (FIRST) Center, an Energy Frontier Research Center (EFRC) - DOE Office of Science, Office of Basic Energy Sciences
dc.description.sponsorshipNSERC
dc.description.sponsorshipIdCAPES: FAPESP/CAPES 2014/27079-9
dc.description.sponsorshipIdCAPES: 2015/50526-4
dc.description.sponsorshipIdCAPES: 2016/09033-7
dc.format.extent3257-3262
dc.identifierhttp://dx.doi.org/10.1021/acs.jpclett.0c00651
dc.identifier.citationJournal Of Physical Chemistry Letters. Washington: Amer Chemical Soc, v. 11, n. 9, p. 3257-3262, 2020.
dc.identifier.doi10.1021/acs.jpclett.0c00651
dc.identifier.issn1948-7185
dc.identifier.urihttp://hdl.handle.net/11449/196903
dc.identifier.wosWOS:000535177500013
dc.language.isoeng
dc.publisherAmer Chemical Soc
dc.relation.ispartofJournal Of Physical Chemistry Letters
dc.sourceWeb of Science
dc.titleStructure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistorsen
dc.typeArtigo
dcterms.rightsHolderAmer Chemical Soc
unesp.author.orcid0000-0001-5865-5892[2]
unesp.author.orcid0000-0002-4731-7051[3]

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