Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

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dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorTorres, H. L.F.
dc.contributor.authorMartino, J. A.
dc.contributor.authorRooyackers, R.
dc.contributor.authorSimoen, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorCollaert, N.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionClaRoo
dc.contributor.institutionImec
dc.contributor.institutionKU Leuven
dc.date.accessioned2019-10-06T15:48:43Z
dc.date.available2019-10-06T15:48:43Z
dc.date.issued2019-05-01
dc.description.abstractThis paper compares, for the first time, the total ionizing dose degradation of 600 keV proton-irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer. This work is based on electrical measurements and TCAD simulations. Devices with different dimensions were exposed up to 10 Mrad(Si) dose of proton radiation. For transistors with narrow fin width, the radiation influence is negligible in both devices types. For WFIN = 250 nm and a proton radiation dose up to 10 Mrad(Si), on the other hand, a severe influence is observed in nFinFETs and pFinFETs present on the same die as the p-type TFETs. In the TFETs, no marked influence is observed. Only for a TFET of WFIN = 500 nm and 10 Mrad(Si) one can observe some radiation influence. The main degradation is caused by the buried oxide positive fixed charges and the interface traps which was also confirmed by TCAD simulations. The tunneling current of Tunnel-FETs presents a much better radiation hardness compared to the drift-diffusion current of SOI FinFETs.en
dc.description.affiliationSao Paulo State University (UNESP) Campus Sao Joao da Boa Vista
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationClaRoo
dc.description.affiliationImec
dc.description.affiliationE.E. Dept KU Leuven
dc.description.affiliationUnespSao Paulo State University (UNESP) Campus Sao Joao da Boa Vista
dc.identifierhttp://dx.doi.org/10.1088/1361-6641/ab118f
dc.identifier.citationSemiconductor Science and Technology, v. 34, n. 6, 2019.
dc.identifier.doi10.1088/1361-6641/ab118f
dc.identifier.issn1361-6641
dc.identifier.issn0268-1242
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85068477013
dc.identifier.urihttp://hdl.handle.net/11449/187835
dc.language.isoeng
dc.relation.ispartofSemiconductor Science and Technology
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectFinFETs
dc.subjectproton radiation
dc.subjectTFETs
dc.titleComparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of viewen
dc.typeArtigo
unesp.author.lattes0496909595465696[1]
unesp.author.orcid0000-0002-0886-7798[1]
unesp.author.orcid0000-0002-5218-4046[5]

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