Rietveld analysis of CaCu3Ti4O12 thin films obtained by RF-sputtering

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dc.contributor.authorFoschini, C. R. [UNESP]
dc.contributor.authorTararam, R. [UNESP]
dc.contributor.authorSimões, A. Z. [UNESP]
dc.contributor.authorRocha, L. S. [UNESP]
dc.contributor.authorSantos, C. O.P. [UNESP]
dc.contributor.authorLongo, E. [UNESP]
dc.contributor.authorVarela, J. A. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T17:27:11Z
dc.date.available2018-12-11T17:27:11Z
dc.date.issued2016-03-01
dc.description.abstractCalcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The crystalline structure and the surface morphology of the films were markedly affected by the growth conditions. Rietveld analysis reveal a CCTO film with 100 % pure perovskite belonging to a space group Im3 and pseudo-cubic structure. The XPS spectroscopy reveal that the in a reducing N2 atmosphere a lower Cu/Ca and Ti/Ca ratio were detected, while the O2 treatment led to an excess of Cu, due to Cu segregation of the surface forming copper oxide crystals. The film present frequency -independent dielectric properties in the temperature range evaluated, which is similar to those properties obtained in single-crystal or epitaxial thin films. The room temperature dielectric constant of the 600-nm-thick CCTO films annealed at 600 °C at 1 kHz was found to be 70. The leakage current of the MFS capacitor structure was governed by the Schottky barrier conduction mechanism and the leakage current density was lower than 10−7 A/cm2 at a 1.0 V. The current–voltage measurements on MFS capacitors established good switching characteristics.en
dc.description.affiliationDept. de Eng. Mecânica Universidade Estadual Paulista – UNESP, Av. Eng. Luiz Edmundo C. Coube 14-01
dc.description.affiliationInstituto de Química Universidade Estadual Paulista – UNESP, Rua Prof. Francisco Degni no 55
dc.description.affiliationUniversidade Estadual Paulista – UNESP, Av. Dr. Ariberto Pereira da Cunha, no 333
dc.description.affiliationUnespDept. de Eng. Mecânica Universidade Estadual Paulista – UNESP, Av. Eng. Luiz Edmundo C. Coube 14-01
dc.description.affiliationUnespInstituto de Química Universidade Estadual Paulista – UNESP, Rua Prof. Francisco Degni no 55
dc.description.affiliationUnespUniversidade Estadual Paulista – UNESP, Av. Dr. Ariberto Pereira da Cunha, no 333
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent2175-2182
dc.identifierhttp://dx.doi.org/10.1007/s10854-015-4084-y
dc.identifier.citationJournal of Materials Science: Materials in Electronics, v. 27, n. 3, p. 2175-2182, 2016.
dc.identifier.doi10.1007/s10854-015-4084-y
dc.identifier.file2-s2.0-84957951854.pdf
dc.identifier.issn1573-482X
dc.identifier.issn0957-4522
dc.identifier.lattes1922357184842767
dc.identifier.orcid0000-0003-1300-4978
dc.identifier.scopus2-s2.0-84957951854
dc.identifier.urihttp://hdl.handle.net/11449/177802
dc.language.isoeng
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.ispartofsjr0,503
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleRietveld analysis of CaCu3Ti4O12 thin films obtained by RF-sputteringen
dc.typeResenha
unesp.author.lattes1922357184842767[1]
unesp.author.orcid0000-0003-1300-4978[1]

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