Investigation of temperature influence on photo-induced conductivity in n-type AlxGa1-xAs

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dc.contributor.authorTaquecita, Marco H. [UNESP]
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.authorOliveira, L. [UNESP]
dc.contributor.authorLi, M. Siu [UNESP]
dc.contributor.authorParreira, S. B. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:19:39Z
dc.date.available2014-05-27T11:19:39Z
dc.date.issued1998-12-01
dc.description.abstractWe present conductance as function of temperature (G×T) under influence of monochromatic light in the range 0.5-1.5 μm for direct as well as indirect bandgap n-type AlxGa1-xAs. Results obtained below 60 K in indirect bandgap sample show the presence of another level of trapping, besides the DX centre, probably a X-valley effective mass state. In direct bandgap samples, these G×T curves show that above bandgap light increases conductivity to higher values than at room temperature and below bandgap light is not enough to avoid trapping. Photoconductivity spectra in indirect bandgap AlxGa1-xAs show that above ≅120 K, the absence of persistent photoconductivity contributes for a very clean spectrum. The mobility of AlxGa1-xAs is modelled considering dipole scattering. Data of transient decay of persistent photoconductivity is simulated using this approach.en
dc.description.affiliationUniversidade Estadual Paulista, Bauru
dc.description.affiliationUnespUniversidade Estadual Paulista, Bauru
dc.format.extent175-186
dc.identifierhttp://dx.doi.org/10.1080/10420159808220289
dc.identifier.citationRadiation Effects and Defects in Solids, v. 146, n. 1 -4 pt 1, p. 175-186, 1998.
dc.identifier.doi10.1080/10420159808220289
dc.identifier.issn1042-0150
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
dc.identifier.scopus2-s2.0-0032314268
dc.identifier.urihttp://hdl.handle.net/11449/65589
dc.identifier.wosWOS:000079993400015
dc.language.isoeng
dc.relation.ispartofRadiation Effects and Defects in Solids
dc.relation.ispartofjcr0.526
dc.relation.ispartofsjr0,234
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectComputer simulation
dc.subjectEnergy gap
dc.subjectPhotoconductivity
dc.subjectThermal effects
dc.subjectThermoanalysis
dc.subjectPhoto-induced conductivity
dc.subjectSemiconducting aluminum compounds
dc.titleInvestigation of temperature influence on photo-induced conductivity in n-type AlxGa1-xAsen
dc.typeArtigo
dcterms.licensehttp://journalauthors.tandf.co.uk/permissions/reusingOwnWork.asp
unesp.author.lattes7730719476451232[2]
unesp.author.orcid0000-0001-7277-4126[4]
unesp.author.orcid0000-0001-5762-6424[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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Bauru - FC - Faculdade de Ciências