Low temperature performance of proton irradiated strained SOI FinFET

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dc.contributor.authorCaparroz, L. F.V.
dc.contributor.authorBordallo, C. C.M.
dc.contributor.authorMartino, J. A.
dc.contributor.authorSimoen, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionImec
dc.contributor.institutionKU Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:48:37Z
dc.date.available2018-12-11T16:48:37Z
dc.date.issued2017-06-29
dc.description.abstractThis paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (VTH), subthreshold swing (SS), the Early voltage VEA and the intrinsic gain voltage (AV). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view.en
dc.description.affiliationLSI PSI USP University of Sao Paulo
dc.description.affiliationImec
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationSão Paulo State University (UNESP) Campus of São João da Boa Vista
dc.description.affiliationUnespSão Paulo State University (UNESP) Campus of São João da Boa Vista
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent61-63
dc.identifierhttp://dx.doi.org/10.1109/ULIS.2017.7962601
dc.identifier.citationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, p. 61-63.
dc.identifier.doi10.1109/ULIS.2017.7962601
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85026745288
dc.identifier.urihttp://hdl.handle.net/11449/169992
dc.language.isoeng
dc.relation.ispartofJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectFinFET
dc.subjectlow temperature
dc.subjectproton radiation
dc.subjectstrained devices
dc.titleLow temperature performance of proton irradiated strained SOI FinFETen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[6]
unesp.author.orcid0000-0002-0886-7798[6]

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