New method for observing self-heating effect using transistor efficiency signature

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dc.contributor.authorMori, C. A.B.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:53:31Z
dc.date.available2018-12-11T16:53:31Z
dc.date.issued2018-03-07
dc.description.abstractThis paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through numerical simulations employing simple analytical models, and then applied experimentally. The transistor efficiencies of short and long channel pFinFETs were used for experimental observation of self-heating effects in this paper. It is possible to see if the self-heating is weak, moderate or strong through the signature format observed on gm/ID versus ID curve.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.format.extent1-3
dc.identifierhttp://dx.doi.org/10.1109/S3S.2017.8309259
dc.identifier.citation2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, v. 2018-March, p. 1-3.
dc.identifier.doi10.1109/S3S.2017.8309259
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85047649925
dc.identifier.urihttp://hdl.handle.net/11449/171051
dc.language.isoeng
dc.relation.ispartof2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectFinFET)
dc.subjectSelf-heating effect (SHE)
dc.subjectSOI
dc.titleNew method for observing self-heating effect using transistor efficiency signatureen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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