Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis

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dc.contributor.authorKumar, Dinesh
dc.contributor.authorGomes, Tiago [UNESP]
dc.contributor.authorAlves, Neri [UNESP]
dc.contributor.authorKettle, Jeff
dc.contributor.authorIEEE
dc.contributor.institutionBangor Univ
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2019-10-04T12:37:57Z
dc.date.available2019-10-04T12:37:57Z
dc.date.issued2018-01-01
dc.description.abstractZinc oxide (ZnO) thin film transistors are well suited to UV sensing application because they absorb predominantly in the UV region due to the wide bandgap (Eg = 3.37 eV) and possess a large exciton binding energy (60 meV) with high radiation hardness. When operated as a transistor, many device performance parameters alter such as threshold Voltage, on-off current and channel mobility. As a result, it is to distinguish between changes in electrical performance induced by UV light and environmental effects that add noise to the sensor performance. In this work, the UV response of zinc oxide thin film transistors (ZnO TFTs) is examined using Taguchi Design of Experiment (DOE) method. By using this multivariate analysis approach, it is possible to reduce the number of calibration tests required for the sensor to accurately assess UV irradiation It is observed that different input conditions (UV power, exposure time, temperature, bias conditions) affect different TFT performance parameters more or less significantly. From the perspective of UV sensing, ON current in the saturation region appears to be the best performance parameter in a ZnO TFT for examining differences in UV exposure.en
dc.description.affiliationBangor Univ, Sch Elect, Bangor LL57 1UT, Gwynedd, Wales
dc.description.affiliationUNESP, Fac Ciencia & Tecnol, DFQB, Presidente Prudente, SP, Brazil
dc.description.affiliationUnespUNESP, Fac Ciencia & Tecnol, DFQB, Presidente Prudente, SP, Brazil
dc.description.sponsorshipNewton Fund
dc.format.extent1390-1392
dc.identifier.citation2018 Ieee Sensors. New York: Ieee, p. 1390-1392, 2018.
dc.identifier.issn1930-0395
dc.identifier.lattes7607651111619269
dc.identifier.urihttp://hdl.handle.net/11449/185722
dc.identifier.wosWOS:000468199300357
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2018 Ieee Sensors
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectZnO thin film transistor
dc.subjectZnO TFT UV photo sensor
dc.subjectRadio frequency sputtering
dc.subjectultraviolet
dc.titleUnderstanding UV sensor performance in ZnO TFTs through the application of multivariate analysisen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
unesp.author.lattes7607651111619269
unesp.departmentFísica, Química e Biologia - FCTpt

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