Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

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dc.contributor.authorLeite, D. M G [UNESP]
dc.contributor.authorPereira, A. L J [UNESP]
dc.contributor.authorSilva, Luciene Ferreira da [UNESP]
dc.contributor.authorSilva, José Humberto Dias da [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:21:57Z
dc.date.available2014-05-27T11:21:57Z
dc.date.issued2006-09-01
dc.description.abstractThe structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (T s ≤ 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.en
dc.description.affiliationLaboratório de Filmes Semicondutores Depto de Física Universidade Estadual Paulista, 17033-360 - Bauru-SP
dc.description.affiliationUnespLaboratório de Filmes Semicondutores Depto de Física Universidade Estadual Paulista, 17033-360 - Bauru-SP
dc.format.extent978-981
dc.identifierhttp://dx.doi.org/10.1590/S0103-97332006000600048
dc.identifier.citationBrazilian Journal of Physics, v. 36, n. 3 B, p. 978-981, 2006.
dc.identifier.doi10.1590/S0103-97332006000600048
dc.identifier.file2-s2.0-33845411201.pdf
dc.identifier.issn0103-9733
dc.identifier.lattes7851826609603221
dc.identifier.lattes1134426200935790
dc.identifier.scieloS0103-97332006000600048
dc.identifier.scopus2-s2.0-33845411201
dc.identifier.urihttp://hdl.handle.net/11449/69066
dc.identifier.wosWOS:000242535600047
dc.language.isoeng
dc.relation.ispartofBrazilian Journal of Physics
dc.relation.ispartofjcr1.082
dc.relation.ispartofsjr0,276
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectGaN
dc.subjectGaN:H
dc.subjectHydrogenation
dc.subjectNanocrystalline
dc.subjectSputtering
dc.titleNanocrystalline GaN and GaN:H films grown by RF-magnetron sputteringen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.scielo.br/revistas/bjp/paboutj.htm
unesp.author.lattes7851826609603221
unesp.author.lattes1134426200935790
unesp.author.orcid0000-0003-4757-8080[2]
unesp.author.orcid0000-0003-0969-6481[4]
unesp.author.orcid0000-0002-1792-6171[1]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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