Analog parameters of solid source Zn diffusion in X Ga1-XAs nTFETs down to 10 K

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dc.contributor.authorBordallo, C.
dc.contributor.authorMartino, J. A.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorAlian, A.
dc.contributor.authorMols, Y.
dc.contributor.authorRooyackers, R.
dc.contributor.authorVandooren, A.
dc.contributor.authorVerhulst, A. S.
dc.contributor.authorSmets, Q.
dc.contributor.authorSimoen, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorCollaert, N.
dc.contributor.institutionImec
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKU Leuven
dc.date.accessioned2018-12-11T16:44:47Z
dc.date.available2018-12-11T16:44:47Z
dc.date.issued2016-10-28
dc.description.abstractThe analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current than the In0.53Ga0.47As counterparts, and, consequently, a higher transconductance due to the lower bandgap. At the same time, the In0.7Ga0.3As devices present higher output conductance values. The balance between these two factors results in a higher intrinsic voltage gain (A V) for In0.7Ga0.3As nTFETs at low gate bias and similar A V for both devices at high gate voltage. The transconductance is reduced at low temperature due to the increase of the bandgap, while the output conductance is decreased (improved) upon cooling, which is related to the reduction of the drain dependence of the BTBT generation rate. The temperature influence is more pronounced in the output conductance than in the transconductance, resulting in an increase of the intrinsic voltage gain at low temperatures for both devices and bias.en
dc.description.affiliationImec, Kapeldreef 75
dc.description.affiliationLSI/PSI/USP University of S�o Paulo, Av. Prof. Luciano Gualberto, trav. 3, no 158
dc.description.affiliationUNESP Univ. Estadual Paulista, Profa. Isette Correa Font�o 305
dc.description.affiliationKU Leuven, Kasteelpark Arenberg 10
dc.description.affiliationUnespUNESP Univ. Estadual Paulista, Profa. Isette Correa Font�o 305
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.identifierhttp://dx.doi.org/10.1088/0268-1242/31/12/124001
dc.identifier.citationSemiconductor Science and Technology, v. 31, n. 12, 2016.
dc.identifier.doi10.1088/0268-1242/31/12/124001
dc.identifier.file2-s2.0-84997498783.pdf
dc.identifier.issn1361-6641
dc.identifier.issn0268-1242
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-84997498783
dc.identifier.urihttp://hdl.handle.net/11449/169174
dc.language.isoeng
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.ispartofsjr0,757
dc.relation.ispartofsjr0,757
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectanalog parameters
dc.subjectcurrent conduction mechanisms
dc.subjectlow temperature
dc.subjectTFET
dc.titleAnalog parameters of solid source Zn diffusion in X Ga1-XAs nTFETs down to 10 Ken
dc.typeArtigo
unesp.author.lattes0496909595465696[3]
unesp.author.orcid0000-0002-0886-7798[3]

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