Transport properties of polycrystalline boron doped diamond

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dc.contributor.authorOliveira, J. R. de
dc.contributor.authorBerengue, O. M. [UNESP]
dc.contributor.authorMoro, J.
dc.contributor.authorFerreira, N. G.
dc.contributor.authorChiquito, A. J.
dc.contributor.authorBaldan, M. R.
dc.contributor.institutionINPE LAS
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionInst Fed Educ Ciencia & Tecnol Sao Paulo
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2015-03-18T15:53:17Z
dc.date.available2015-03-18T15:53:17Z
dc.date.issued2014-08-30
dc.description.abstractThe influence of doping level in the electronic conductivity and resistivity properties of synthetic diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated. Eight different doping level concentrations varied from 500 to 30,000 ppm were considered. The polycrystalline morphology observed by scanning electron microscopy and Raman spectra was strongly affected by the addition of boron. The electric characterization by Hall effect as a function of temperature and magnetic field showed that at sufficiently low temperatures, electrical conduction is dominated by variable range hopping (VRH) conducting process. The resistivity was also investigated by temperature-dependent transport measurements in order to investigate the conduction mechanism in the doped samples. The samples exhibited the VRH (m = 1/4) mechanism in the temperature range from 77 to 300 K. The interface between metal, and our HFCVD diamond was also investigated for the lower doped samples. (C) 2014 Elsevier B.V. All rights reserved.en
dc.description.affiliationINPE LAS, Inst Nacl Pesquisas Espaciais, BR-12227010 Campos, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, UNESP Dept Fis, BR-12516410 Guaratingueta, Brazil
dc.description.affiliationInst Fed Educ Ciencia & Tecnol Sao Paulo, BR-72929600 Braganca Paulista, SP, Brazil
dc.description.affiliationUniv Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, UNESP Dept Fis, BR-12516410 Guaratingueta, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdCNPq: 2010/302640-0
dc.description.sponsorshipIdFAPESP: 11/10171-1
dc.format.extent5-8
dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2014.04.161
dc.identifier.citationApplied Surface Science. Amsterdam: Elsevier Science Bv, v. 311, p. 5-8, 2014.
dc.identifier.doi10.1016/j.apsusc.2014.04.161
dc.identifier.issn0169-4332
dc.identifier.lattes1312983845888585
dc.identifier.urihttp://hdl.handle.net/11449/116418
dc.identifier.wosWOS:000339037200002
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofApplied Surface Science
dc.relation.ispartofjcr4.439
dc.relation.ispartofsjr1,093
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectDiamonden
dc.subjectBDDen
dc.subjectHall effecten
dc.titleTransport properties of polycrystalline boron doped diamonden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes1312983845888585
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt
unesp.departmentFísica e Química - FEGpt

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Guaratinguetá - FEG - Faculdade de Engenharia e Ciências