Ground plane impact on the threshold voltage of relaxed ge pfinfets

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dc.contributor.authorGoncalves, G. V.
dc.contributor.authorOliveira, A. V.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.authorWitters, L.
dc.contributor.authorMitard, J.
dc.contributor.authorCollaert, N.
dc.contributor.authorClaeys, C.
dc.contributor.authorSimoen, E.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUTFPR
dc.contributor.institutionImec
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKU Leuven
dc.date.accessioned2019-10-06T15:26:05Z
dc.date.available2019-10-06T15:26:05Z
dc.date.issued2018-10-26
dc.description.abstractIn this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been utilized. There are two main process parameters varied in the numerical simulations: a different ground plane peak doping concentration and the distance between the bottom part of the fin and the ground plane. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, for the studied ground plane doping concentration range. Additionally, the slope of the curve of the threshold voltage as a function of channel width varies from 250μV/nm till around 700 μV/nm.en
dc.description.affiliationLSI/PSI/USP
dc.description.affiliationUTFPR
dc.description.affiliationImec
dc.description.affiliationUNESP
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationUnespUNESP
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2018.8511544
dc.identifier.citation33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511544
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85057435706
dc.identifier.urihttp://hdl.handle.net/11449/187118
dc.language.isoeng
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectFinFET
dc.subjectGermanium
dc.subjectP-type
dc.subjectSTI last
dc.titleGround plane impact on the threshold voltage of relaxed ge pfinfetsen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[3]
unesp.author.orcid0000-0002-0886-7798[3]

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