Magnetoelectric coupling at room temperature in LaTiO3/SrTiO3 heterojunctions

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Simoes, A. Z. [UNESP]
Ortega, P. P. [UNESP]
Ramirez, M. A. [UNESP]
Moreno, H. [UNESP]
Aldao, C. M.
Ponce, M. A.
Moura, F.

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This work focuses on LaTiO3 (LTO) thin films synthesized by the polymeric precursor method and deposited onto SrTiO3 (STO) substrates via spin coating. The results show interesting coexisting ferromagnetic (Mr≈2.85 emu/g) - ferroelectric (Pr≈18.5 μC/cm2) responses at room temperature. Magnetoelectric coupling can be observed under DC bias magnetic field (14 V/cm.Oe), and its dielectric constant is affected by the coupling between magnetic and electric dipoles at room temperature as well as oxygen octahedra distortion along direction a. Little film-substrate mismatch significantly influences the system dielectric properties. Our results suggest the possibility to induce ferromagnetic/ferroelectric phases in the LTO/STO heterojunctions using an electric/magnetic field, respectively, due to the magnetoelectric coupling. This study also helps comprehend oxygen vacancy dynamics when applying a tensile strain or an external electric field, which is fundamental for actuators, switches, magnetic field sensors, and new types of electronic memory devices.



Chemical synthesis, Mott insulator, Multiferroic, Thin films

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Materials Research Bulletin, v. 162.