Magnetoelectric coupling at room temperature in LaTiO3/SrTiO3 heterojunctions

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dc.contributor.authorSimoes, A. Z. [UNESP]
dc.contributor.authorOrtega, P. P. [UNESP]
dc.contributor.authorRamirez, M. A. [UNESP]
dc.contributor.authorMoreno, H. [UNESP]
dc.contributor.authorAldao, C. M.
dc.contributor.authorPonce, M. A.
dc.contributor.authorMoura, F.
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversity of Mar del Plata (UNMdP) and National Research Council (CONICET)
dc.contributor.institutionNational Research Council (CONICET)
dc.contributor.institutionFederal University of Itajuba
dc.date.accessioned2023-07-29T16:04:26Z
dc.date.available2023-07-29T16:04:26Z
dc.date.issued2023-06-01
dc.description.abstractThis work focuses on LaTiO3 (LTO) thin films synthesized by the polymeric precursor method and deposited onto SrTiO3 (STO) substrates via spin coating. The results show interesting coexisting ferromagnetic (Mr≈2.85 emu/g) - ferroelectric (Pr≈18.5 μC/cm2) responses at room temperature. Magnetoelectric coupling can be observed under DC bias magnetic field (14 V/cm.Oe), and its dielectric constant is affected by the coupling between magnetic and electric dipoles at room temperature as well as oxygen octahedra distortion along direction a. Little film-substrate mismatch significantly influences the system dielectric properties. Our results suggest the possibility to induce ferromagnetic/ferroelectric phases in the LTO/STO heterojunctions using an electric/magnetic field, respectively, due to the magnetoelectric coupling. This study also helps comprehend oxygen vacancy dynamics when applying a tensile strain or an external electric field, which is fundamental for actuators, switches, magnetic field sensors, and new types of electronic memory devices.en
dc.description.affiliationSchool of Engineering and Sciences São Paulo State University (UNESP), Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas, SP
dc.description.affiliationInstitute of Scientific and Technological Research in Electronics (ICYTE) University of Mar del Plata (UNMdP) and National Research Council (CONICET), Juan B. Justo 4302
dc.description.affiliationInstitute of Materials Science and Technology Research (INTEMA) University of Mar del Plata (UNMdP) National Research Council (CONICET), Juan B. Justo 4302
dc.description.affiliationAdvanced Materials Interdisciplinary Laboratory Federal University of Itajuba, UNIFEI – Campus Itabira, MG
dc.description.affiliationUnespSchool of Engineering and Sciences São Paulo State University (UNESP), Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas, SP
dc.identifierhttp://dx.doi.org/10.1016/j.materresbull.2023.112169
dc.identifier.citationMaterials Research Bulletin, v. 162.
dc.identifier.doi10.1016/j.materresbull.2023.112169
dc.identifier.issn0025-5408
dc.identifier.scopus2-s2.0-85146973185
dc.identifier.urihttp://hdl.handle.net/11449/249609
dc.language.isoeng
dc.relation.ispartofMaterials Research Bulletin
dc.sourceScopus
dc.subjectChemical synthesis
dc.subjectMott insulator
dc.subjectMultiferroic
dc.subjectThin films
dc.titleMagnetoelectric coupling at room temperature in LaTiO3/SrTiO3 heterojunctionsen
dc.typeArtigo
unesp.author.orcid0000-0002-4254-1281[2]
unesp.author.orcid0000-0003-0275-0043[4]
unesp.author.orcid0000-0001-9827-9086[5]
unesp.departmentMateriais e Tecnologia - FEGpt

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Guaratinguetá - FEG - Faculdade de Engenharia e Ciências