Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
Nenhuma Miniatura disponível
Data
2019-01-01
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Ieee
Tipo
Trabalho apresentado em evento
Direito de acesso
Resumo
This paper shows the influence of channel width (W-NW) and channel length (L) on intrinsic voltage gain (A(V)) and on unit-gain frequency (f(t)) of omega-gate nanowire SOI MOSFET. The f(t) is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the W-NW of 10 nm, which improved transconductance, consequently, improving both A(V) and f(t). This technology showed values of A(V) around 80 dB and a f(t) of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).
Descrição
Palavras-chave
Idioma
Inglês
Como citar
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
