ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device

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dc.contributor.authorVieira, Douglas Henrique [UNESP]
dc.contributor.authorNogueira, Gabriel Leonardo [UNESP]
dc.contributor.authorMorais, Rogério Miranda [UNESP]
dc.contributor.authorFugikawa-Santos, Lucas [UNESP]
dc.contributor.authorSeidel, Keli Fabiana
dc.contributor.authorAlves, Neri [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionPhysics Department
dc.date.accessioned2023-07-29T13:28:05Z
dc.date.available2023-07-29T13:28:05Z
dc.date.issued2022-11-01
dc.description.abstractTransistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics.en
dc.description.affiliationSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SP
dc.description.affiliationSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department, SP
dc.description.affiliationUniversidade Tecnológica Federal Do Paraná – UTFPR Physics Department, PR
dc.description.affiliationUnespSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SP
dc.description.affiliationUnespSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department, SP
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 2018/04169–3, 2020/12282–4, 2018/02037–2
dc.description.sponsorshipIdFAPESP: 2019/08019–9
dc.identifierhttp://dx.doi.org/10.1016/j.sna.2022.113989
dc.identifier.citationSensors and Actuators A: Physical, v. 347.
dc.identifier.doi10.1016/j.sna.2022.113989
dc.identifier.issn0924-4247
dc.identifier.scopus2-s2.0-85141778249
dc.identifier.urihttp://hdl.handle.net/11449/247868
dc.language.isoeng
dc.relation.ispartofSensors and Actuators A: Physical
dc.sourceScopus
dc.subjectElectrolyte-gated
dc.subjectPhotodetector
dc.subjectSpray-coating
dc.subjectTransistor
dc.subjectUltraviolet
dc.subjectZnO
dc.titleZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing deviceen
dc.typeArtigo
unesp.departmentEstatística - FCTpt

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Presidente Prudente - FCT - Faculdade de Ciências e Tecnologia
Artigos - Física - IGCE