On the nucleation of GaP/GaAs and the effect of buried stress fields

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dc.contributor.authorZelcovit, J. G.
dc.contributor.authorBortoleto, J. R R [UNESP]
dc.contributor.authorBettini, J.
dc.contributor.authorCotta, M. A.
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionLaboratório Nacional de Luz Sincrotron
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:21:57Z
dc.date.available2014-05-27T11:21:57Z
dc.date.issued2006-08-23
dc.description.abstractWe have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.en
dc.description.affiliationInstituto de Física Gleb Wataghin DFA/LPD UNICAMP, CP6165, 13081-790, Campinas-SP
dc.description.affiliationLaboratório Nacional de Luz Sincrotron, CP 6192, 13084-971, Campinas-SP
dc.description.affiliationLaPTec GPM-UNESP, Av. 3 de Março, 511, 18085-180, Sorocaba-SP
dc.description.affiliationUnespLaPTec GPM-UNESP, Av. 3 de Março, 511, 18085-180, Sorocaba-SP
dc.format.extent133-138
dc.identifierhttp://dx.doi.org/10.1557/PROC-0891-EE03-15
dc.identifier.citationMaterials Research Society Symposium Proceedings, v. 891, p. 133-138.
dc.identifier.doi10.1557/PROC-0891-EE03-15
dc.identifier.issn0272-9172
dc.identifier.scopus2-s2.0-33747335199
dc.identifier.urihttp://hdl.handle.net/11449/69042
dc.language.isoeng
dc.relation.ispartofMaterials Research Society Symposium Proceedings
dc.relation.ispartofsjr0,139
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectChemical beam epitaxy
dc.subjectEpitaxial growth
dc.subjectNucleation
dc.subjectReflection high energy electron diffraction
dc.subjectSemiconductor quantum dots
dc.subjectStress analysis
dc.subjectSurface topography
dc.subjectCompositional modulation
dc.subjectIn-situ monitoring
dc.subjectPeriodic stress
dc.subjectVertically-coupled quantum dots
dc.subjectSemiconducting gallium arsenide
dc.titleOn the nucleation of GaP/GaAs and the effect of buried stress fieldsen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://journals.cambridge.org/action/displaySpecialPage?pageId=4676
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Ciência e Tecnologia, Sorocabapt

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