Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

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Destro, F. B. [UNESP]
Moura, F.
Foschini, C. R. [UNESP]
Ranieri, M. G. [UNESP]
Longo, E. [UNESP]
Simoes, A. Z. [UNESP]

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Elsevier B.V.


This paper focuses on the electrical properties of Bi0.95Nd0.05FeO3 thin films (BNFO05) deposited on Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method. A BNFO05 single phase was simultaneously grown at a temperature of 500 degrees C for 2 h. Room temperature magnetic coercive field indicates that the film is magnetically soft. The remanent polarization (P-r) and the coercive field (E-c) measured were 51 mu C/cm(2) and 65.0 kV/cm, respectively, and were superior to the values found in the literature. XPS results show that the oxidation state of Fe is purely 3+, which is beneficial for producing a BNFO05 film with low leakage current. The polarization of the Au/BNFO05 on Pt/TiO2/SiO2/Si (100) capacitors with a thickness of 230 nm exhibited no degradation after 1 x 10(8) switching cycles at a frequency of 1 MHz. Experimental results demonstrated that the soft chemical method is a promising technique for growing films with excellent electrical properties, and can be used in various integrated device applications. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.



Chemical synthesis, Electron diffraction, Ferroelectricity, Thin films

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Ceramics International. Oxford: Elsevier Sci Ltd, v. 40, n. 6, p. 8715-8722, 2014.