Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRamirez, M. A.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:17:59Z
dc.date.available2014-05-20T14:17:59Z
dc.date.issued2006-07-01
dc.description.abstractFerroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.en
dc.description.affiliationUNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUNESP, Mat Sci & Technol, BR-1703336 Bauru, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Mat Sci & Technol, BR-1703336 Bauru, SP, Brazil
dc.format.extent2020-2023
dc.identifierhttp://dx.doi.org/10.1016/j.matlet.2005.12.071
dc.identifier.citationMaterials Letters. Amsterdam: Elsevier B.V., v. 60, n. 16, p. 2020-2023, 2006.
dc.identifier.doi10.1016/j.matlet.2005.12.071
dc.identifier.issn0167-577X
dc.identifier.urihttp://hdl.handle.net/11449/25403
dc.identifier.wosWOS:000237756600020
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Letters
dc.relation.ispartofjcr2.687
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectthin filmspt
dc.subjectatomic force microscopypt
dc.subjectdielectric propertiespt
dc.subjectfatiguept
dc.titleFerroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical methoden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[3]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[3]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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