Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method
dc.contributor.author | Simoes, A. Z. | |
dc.contributor.author | Ramirez, M. A. | |
dc.contributor.author | Riccardi, C. S. | |
dc.contributor.author | Longo, Elson [UNESP] | |
dc.contributor.author | Varela, José Arana [UNESP] | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T14:17:59Z | |
dc.date.available | 2014-05-20T14:17:59Z | |
dc.date.issued | 2006-07-01 | |
dc.description.abstract | Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved. | en |
dc.description.affiliation | UNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil | |
dc.description.affiliation | UNESP, Mat Sci & Technol, BR-1703336 Bauru, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, Mat Sci & Technol, BR-1703336 Bauru, SP, Brazil | |
dc.format.extent | 2020-2023 | |
dc.identifier | http://dx.doi.org/10.1016/j.matlet.2005.12.071 | |
dc.identifier.citation | Materials Letters. Amsterdam: Elsevier B.V., v. 60, n. 16, p. 2020-2023, 2006. | |
dc.identifier.doi | 10.1016/j.matlet.2005.12.071 | |
dc.identifier.issn | 0167-577X | |
dc.identifier.uri | http://hdl.handle.net/11449/25403 | |
dc.identifier.wos | WOS:000237756600020 | |
dc.language.iso | eng | |
dc.publisher | Elsevier B.V. | |
dc.relation.ispartof | Materials Letters | |
dc.relation.ispartofjcr | 2.687 | |
dc.rights.accessRights | Acesso restrito | |
dc.source | Web of Science | |
dc.subject | thin films | pt |
dc.subject | atomic force microscopy | pt |
dc.subject | dielectric properties | pt |
dc.subject | fatigue | pt |
dc.title | Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method | en |
dc.type | Artigo | |
dcterms.license | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
dcterms.rightsHolder | Elsevier B.V. | |
unesp.author.lattes | 3573363486614904[1] | |
unesp.author.lattes | 0173401604473200[3] | |
unesp.author.orcid | 0000-0003-2535-2187[1] | |
unesp.author.orcid | 0000-0003-2192-5312[3] | |
unesp.campus | Universidade Estadual Paulista (Unesp), Instituto de Química, Araraquara | pt |
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