Ferroelectric SBN thin films grown by an SBN/Bi2O3 PLD sequential process

Página do item simplificado
dc.contributor.authorZanetti, S. M.
dc.contributor.authorDuclere, J. R.
dc.contributor.authorGuilloux-Viry, M.
dc.contributor.authorBouquet, V.
dc.contributor.authorLeite, E. R.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorPerrin, A.
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUMR 6511 CNRS/Université de Rennes 1
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:20:18Z
dc.date.available2014-05-27T11:20:18Z
dc.date.issued2001-10-01
dc.description.abstractFerroelectric SrBi2Nb2O9 (SBN) thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si(100) using a sequential deposition process from two SBN and Bi2O3 targets. This route allows for bismuth enrichment of the film composition in order to improve the ferroelectric characteristics. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition of films and targets was determined by energy dispersive X-ray spectrometry (EDX). The deposition temperature, which provided well-crystallized layered perovskite SBN phase films in situ, was found to be 700°C. The results were compared with those obtained for SBN films deposited at 400°C and then crystallized ex situ. For an ex situ annealing temperature of 750°C, a remanent polarization value (Pr) of 23.2 μc/cm2 and a coercive field (Ec) of 112 kV/cm were measured. © 2001 Elsevier Science Ltd. All rights reserved.en
dc.description.affiliationDepartamento de Química Universidade Federal de São Carlos UFSCar, PO Box 676, 13560-905 São Carlos, SP
dc.description.affiliationLaboratoire de Chimie du Solide et Inorganique Moléculaire UMR 6511 CNRS/Université de Rennes 1 Campus de Beaulieu, 35042 Rennes Cedex
dc.description.affiliationInstituto de Química Universidade Estadual de São Paulo UNESP, PO Box 355, 14801-970 Araraquara, SP
dc.description.affiliationUnespInstituto de Química Universidade Estadual de São Paulo UNESP, PO Box 355, 14801-970 Araraquara, SP
dc.format.extent2199-2205
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(00)00304-6
dc.identifier.citationJournal of the European Ceramic Society, v. 21, n. 12, p. 2199-2205, 2001.
dc.identifier.doi10.1016/S0955-2219(00)00304-6
dc.identifier.issn0955-2219
dc.identifier.scopus2-s2.0-0035479512
dc.identifier.urihttp://hdl.handle.net/11449/66587
dc.language.isoeng
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectFerroelectric properties
dc.subjectFilms
dc.subjectPLD
dc.subjectPulsed laser deposition
dc.subjectSrBi2Nb2O9
dc.subjectDeposition
dc.subjectFerroelectric ceramics
dc.subjectPerovskite
dc.subjectScanning electron microscopy
dc.subjectX ray diffraction analysis
dc.subjectX ray spectroscopy
dc.subjectPolarization value (Pr)
dc.subjectThin films
dc.subjectfilm
dc.titleFerroelectric SBN thin films grown by an SBN/Bi2O3 PLD sequential processen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

Arquivos

Coleções

Araraquara - IQAR - Instituto de Química