Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

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dc.contributor.authorBordallo, C.
dc.contributor.authorMartino, J.
dc.contributor.authorAgopian, P. [UNESP]
dc.contributor.authorAlian, A.
dc.contributor.authorMols, Y.
dc.contributor.authorRooyackers, R.
dc.contributor.authorVandooren, A.
dc.contributor.authorVerhulst, A.
dc.contributor.authorSimoen, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorCollaert, N.
dc.contributor.authorThean, A.
dc.contributor.institutionImec
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKU Leuven
dc.date.accessioned2018-12-11T16:45:48Z
dc.date.available2018-12-11T16:45:48Z
dc.date.issued2017-01-03
dc.description.abstractThis work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount (In0.7Ga0.3As compared to In0.53Ga0.47As) the band to band tunneling (BTBT) is improved due to bandgap narrowing. A higher Zn diffusion temperature gives rise to a higher source doping, resulting in a smaller tunneling length, which also increases BTBT. In both devices the intrinsic voltage gain is improved. One interesting characteristic of these devices is that they present good analog performance at low voltages (VGS=VDS=0.6V), which is promising for low power/low voltage analog applications. High-temperature operation increases in all cases more the output conductance than the transconductance, resulting in a lower intrinsic voltage gain.en
dc.description.affiliationImec
dc.description.affiliationLSI PSI USP University of Sao Paulo
dc.description.affiliationUNESP Univ. Estadual Paulista Campus de Sao Joao da Boa Vista
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationUnespUNESP Univ. Estadual Paulista Campus de Sao Joao da Boa Vista
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.identifierhttp://dx.doi.org/10.1109/S3S.2016.7804393
dc.identifier.citation2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016.
dc.identifier.doi10.1109/S3S.2016.7804393
dc.identifier.scopus2-s2.0-85011256377
dc.identifier.urihttp://hdl.handle.net/11449/169419
dc.language.isoeng
dc.relation.ispartof2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectAnalog
dc.subjectIII-Vmaterials
dc.subjectTemperature effects
dc.subjectTFET
dc.titleImpact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETsen
dc.typeTrabalho apresentado em evento

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