Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

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dc.contributor.authorAntunes, A. C.
dc.contributor.authorAntunes, S. M.
dc.contributor.authorPianaro, S. A.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniv Estadual Ponta Grossa
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:23:55Z
dc.date.available2014-05-20T15:23:55Z
dc.date.issued2000-01-01
dc.description.abstractThe effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.en
dc.description.affiliationUniv Estadual Ponta Grossa, BR-84031510 Ponta Grossa, PR, Brazil
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, BR-13560905 Sao Carlos, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.format.extent1453-1458
dc.identifierhttp://dx.doi.org/10.1023/A:1004748006457
dc.identifier.citationJournal of Materials Science. Dordrecht: Kluwer Academic Publ, v. 35, n. 6, p. 1453-1458, 2000.
dc.identifier.doi10.1023/A:1004748006457
dc.identifier.issn0022-2461
dc.identifier.urihttp://hdl.handle.net/11449/34603
dc.identifier.wosWOS:000085186000021
dc.language.isoeng
dc.publisherKluwer Academic Publ
dc.relation.ispartofJournal of Materials Science
dc.relation.ispartofjcr2.993
dc.relation.ispartofsjr0,807
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramicen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights
dcterms.rightsHolderKluwer Academic Publ
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química