Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
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Elsevier B.V.
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Elsevier
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Abstract
We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.
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Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms. Amsterdam: Elsevier B.V., v. 238, n. 1-4, p. 329-333, 2005.
