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Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

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dc.contributor.authorAzevedo, G. D.
dc.contributor.authorDa Silva, JHD
dc.contributor.authorAvendano, E.
dc.contributor.institutionLab Nacl Luz Sincrotron
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Costa Rica
dc.date.accessioned2014-05-20T15:20:21Z
dc.date.available2014-05-20T15:20:21Z
dc.date.issued2005-08-01
dc.description.abstractWe have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.en
dc.description.affiliationLab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil
dc.description.affiliationUNESP, Fac Ciências, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUniv Costa Rica, Ctr Ciência & Ingn Mat, San Jose 2060, Costa Rica
dc.description.affiliationUnespUNESP, Fac Ciências, BR-17033360 Bauru, SP, Brazil
dc.format.extent329-333
dc.identifierhttp://dx.doi.org/10.1016/j.nimb.2005.06.071
dc.identifier.citationNuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms. Amsterdam: Elsevier B.V., v. 238, n. 1-4, p. 329-333, 2005.
dc.identifier.doi10.1016/j.nimb.2005.06.071
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/11449/31673
dc.identifier.wosWOS:000232390400069
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms
dc.relation.ispartofjcr1.323
dc.rights.accessRightsAcesso restritopt
dc.sourceWeb of Science
dc.subjectEXAFSpt
dc.subjectgallium arsenidept
dc.subjectGaAspt
dc.subjectsputteringpt
dc.subjecthydrogenationpt
dc.titleEffect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputteringen
dc.typeArtigopt
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.orcid0000-0003-0301-3280[1]
unesp.author.orcid0000-0003-0969-6481[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt

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