Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
| dc.contributor.author | Vieira, Douglas H. | |
| dc.contributor.author | Badiei, Nafiseh | |
| dc.contributor.author | Evans, Jonathan E. | |
| dc.contributor.author | Alves, Neri | |
| dc.contributor.author | Kettle, Jeff | |
| dc.contributor.author | Li, Lijie | |
| dc.contributor.author | IEEE | |
| dc.contributor.institution | Bangor Univ | |
| dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
| dc.contributor.institution | Swansea Univ | |
| dc.date.accessioned | 2021-06-25T15:03:50Z | |
| dc.date.available | 2021-06-25T15:03:50Z | |
| dc.date.issued | 2020-01-01 | |
| dc.description.abstract | beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto beta-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10(7) and high forward current of 17.58 mA/cm(2) at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device. | en |
| dc.description.affiliation | Bangor Univ, Sch Elect Engn, Bangor, Gwynedd, Wales | |
| dc.description.affiliation | UNESP Sao Paulo State Univ, Dept Phys, Presidente Prudente, Brazil | |
| dc.description.affiliation | Swansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea, W Glam, Wales | |
| dc.description.affiliationUnesp | UNESP Sao Paulo State Univ, Dept Phys, Presidente Prudente, Brazil | |
| dc.description.sponsorship | Solar Photovoltaic Academic Research Consortium II (SPARC II) project - WEFO | |
| dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description.sponsorship | Programa de Pos-Graduacao em Ciencia e Tecnologia de Materiais (POSMAT) | |
| dc.description.sponsorshipId | FAPESP: 2019/14366-3 | |
| dc.format.extent | 4 | |
| dc.identifier.citation | 2020 Ieee Sensors. New York: Ieee, 4 p., 2020. | |
| dc.identifier.issn | 1930-0395 | |
| dc.identifier.uri | http://hdl.handle.net/11449/210291 | |
| dc.identifier.wos | WOS:000646236300245 | |
| dc.language.iso | eng | |
| dc.publisher | Ieee | |
| dc.relation.ispartof | 2020 Ieee Sensors | |
| dc.source | Web of Science | |
| dc.subject | Schottky diode | |
| dc.subject | beta-Ga2O3 | |
| dc.subject | deep UV | |
| dc.subject | planar diode | |
| dc.title | Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications | en |
| dc.type | Trabalho apresentado em evento | |
| dcterms.license | http://www.ieee.org/publications_standards/publications/rights/rights_policies.html | |
| dcterms.rightsHolder | Ieee | |
| dspace.entity.type | Publication | |
| unesp.department | Estatística - FCT | pt |