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The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

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dc.contributor.authorTeixeira, Fernando F.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorBarraud, Sylvain
dc.contributor.authorVinet, Maud
dc.contributor.authorFaynot, Olivier
dc.contributor.authorMartino, Joao A.
dc.contributor.authorIEEE
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCEA
dc.contributor.institutionUniv Grenoble Alpes
dc.date.accessioned2018-11-26T15:47:36Z
dc.date.available2018-11-26T15:47:36Z
dc.date.issued2017-01-01
dc.description.abstractthe goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.en
dc.description.affiliationUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
dc.description.affiliationSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Joao Da Boa Vista, SP, Brazil
dc.description.affiliationCEA, LETI, Minatec Campus, Grenoble, France
dc.description.affiliationUniv Grenoble Alpes, Grenoble, France
dc.description.affiliationUnespSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Joao Da Boa Vista, SP, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent4
dc.identifier.citation2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.urihttp://hdl.handle.net/11449/160134
dc.identifier.wosWOS:000426524500053
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands
dc.rights.accessRightsAcesso abertopt
dc.sourceWeb of Science
dc.subjectNanowire
dc.subjectproton irradiation
dc.subjectback leakage current
dc.subjectoxide charger
dc.titleThe influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistorsen
dc.typeTrabalho apresentado em eventopt
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication
relation.isOrgUnitOfPublication72ed3d55-d59c-4320-9eee-197fc0095136
relation.isOrgUnitOfPublication.latestForDiscovery72ed3d55-d59c-4320-9eee-197fc0095136
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vistapt

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São João da Boa Vista - FESJBV - Faculdade de Engenharia, São João da Boa Vista