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Nonlinear optical properties of Bi2O3-GeO2 glass at 800 and 532 nm

dc.contributor.authorOliveira, Tâmara R.
dc.contributor.authorFalcão-Filho, Edilson L.
dc.contributor.authorDe Araújo, Cid B.
dc.contributor.authorDa Silva, Diego S.
dc.contributor.authorKassab, Luciana R. P. [UNESP]
dc.contributor.authorDa Silva, Davinson M. [UNESP]
dc.contributor.institutionUniversidade Estadual da Paraíba
dc.contributor.institutionUniversidade Federal de Pernambuco (UFPE)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:30:11Z
dc.date.available2014-05-27T11:30:11Z
dc.date.issued2013-08-21
dc.description.abstractThe nonlinear (NL) optical properties of glassy xBi2O 3-(1-x) GeO2 with x = 0.72 and 0.82 were investigated. The experiments were performed with lasers at 800 nm (pulses of 150 fs) and 532 nm (pulses of 80 ps and 250 ns). Using the Kerr gate technique, we observed that the NL response of the samples at 800 nm is faster than 150 fs. NL refraction indices, | n 2 | ≈ 5 × 10-16 cm2/W, and two-photon absorption coefficients, α 2, smaller than 0.03 cm/GW, were measured at 800 nm. At 532 nm, we measured the NL transmittance of the samples. From the results obtained, we determined α 2 ≈1 cm/GW and excited-state absorption cross-sections of ≈10-22 cm2 due to free-carriers. © 2013 AIP Publishing LLC.en
dc.description.affiliationDepartamento de Física Universidade Estadual da Paraíba, 58429-500 Campina Grande, PB
dc.description.affiliationDepartamento de Física Universidade Federal de Pernambuco, 50670-901 Recife, PE
dc.description.affiliationDepartamento de Engenharia de Sistemas Eletrônicos Escola Politécnica Universidade de São Paulo, 05508-970 São Paulo, SP
dc.description.affiliationLaboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos Faculdade de Tecnologia de São Paulo CEETEPS/UNESP, 01124-060 São Paulo, SP
dc.description.affiliationUnespLaboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos Faculdade de Tecnologia de São Paulo CEETEPS/UNESP, 01124-060 São Paulo, SP
dc.identifierhttp://dx.doi.org/10.1063/1.4818502
dc.identifier.citationJournal of Applied Physics, v. 114, n. 7, 2013.
dc.identifier.doi10.1063/1.4818502
dc.identifier.file2-s2.0-84883309617.pdf
dc.identifier.issn0021-8979
dc.identifier.scopus2-s2.0-84883309617
dc.identifier.urihttp://hdl.handle.net/11449/76307
dc.identifier.wosWOS:000323510900012
dc.language.isoeng
dc.relation.ispartofJournal of Applied Physics
dc.relation.ispartofjcr2.176
dc.relation.ispartofsjr0,739
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectExcited state absorption
dc.subjectFree carriers
dc.subjectKerr gates
dc.subjectNon-linear optical properties
dc.subjectRefraction index
dc.subjectTwo-photon absorptions
dc.subjectTwo photon processes
dc.subjectGlass
dc.titleNonlinear optical properties of Bi2O3-GeO2 glass at 800 and 532 nmen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dspace.entity.typePublication

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