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Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

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dc.contributor.authorClaeys, Cor
dc.contributor.authorAgopian, Paula [UNESP]
dc.contributor.authorAlian, Alirezza
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorFang, Wen
dc.contributor.authorMartino, Joao
dc.contributor.authorMitard, Jerome
dc.contributor.authorNeves, Felipe
dc.contributor.authorOliviera, Alberto
dc.contributor.authorSimoen, Eddy
dc.contributor.institutionImec
dc.contributor.institutionKU Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionMicrosystem and Terahertz Research Center
dc.contributor.institutionGhent University
dc.date.accessioned2018-12-11T16:49:13Z
dc.date.available2018-12-11T16:49:13Z
dc.date.issued2017-07-31
dc.description.abstractThis review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III-V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.en
dc.description.affiliationImec
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationUNESP Univ Estadual Paulista
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationMicrosystem and Terahertz Research Center
dc.description.affiliationDept. Solid-State Physics Ghent University
dc.description.affiliationUnespUNESP Univ Estadual Paulista
dc.format.extent288-293
dc.identifierhttp://dx.doi.org/10.1109/ICSICT.2016.7998900
dc.identifier.citation2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 288-293.
dc.identifier.doi10.1109/ICSICT.2016.7998900
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85028681516
dc.identifier.urihttp://hdl.handle.net/11449/170089
dc.language.isoeng
dc.relation.ispartof2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleLow-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platformen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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