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Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers

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dc.contributor.authorTabata, A.
dc.contributor.authorLeite, JR
dc.contributor.authorLima, A. P.
dc.contributor.authorSilveira, E.
dc.contributor.authorLemos, V
dc.contributor.authorFrey, T.
dc.contributor.authorAs, D. J.
dc.contributor.authorSchikora, D.
dc.contributor.authorLischka, K.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionUniv Gesamthsch Paderborn
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:29:45Z
dc.date.available2014-05-20T15:29:45Z
dc.date.issued1999-08-23
dc.description.abstractTransverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)01234-6].en
dc.description.affiliationUniv São Paulo, Inst Fis, BR-05315970 São Paulo, Brazil
dc.description.affiliationUniv Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
dc.description.affiliationUniv Gesamthsch Paderborn, FB Phys 6, D-33098 Paderborn, Germany
dc.description.affiliationUNESP, São Paulo, Brazil
dc.description.affiliationUnespUNESP, São Paulo, Brazil
dc.format.extent1095-1097
dc.identifierhttp://dx.doi.org/10.1063/1.124608
dc.identifier.citationApplied Physics Letters. Woodbury: Amer Inst Physics, v. 75, n. 8, p. 1095-1097, 1999.
dc.identifier.doi10.1063/1.124608
dc.identifier.fileWOS000082037500022.pdf
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11449/39252
dc.identifier.wosWOS:000082037500022
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofApplied Physics Letters
dc.relation.ispartofjcr3.495
dc.relation.ispartofsjr1,382
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleRaman phonon modes of zinc blende InxGa1-xN alloy epitaxial layersen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dcterms.rightsHolderAmer Inst Physics
dspace.entity.typePublication
unesp.author.lattes9354064620643611[1]
unesp.author.orcid0000-0002-9389-0238[1]

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