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Novel dielectrics compounds grown by atomic layer deposition as sustainable materials for chalcogenides thin-films photovoltaics technologies

dc.contributor.authorChiappim Junior, William
dc.contributor.authorMoreno, Leandro X. [UNESP]
dc.contributor.authorPessoa, Rodrigo Savio
dc.contributor.authorCunha, António F. da
dc.contributor.authorSalomé, Pedro M. P.
dc.contributor.authorLeitão, Joaquim P.
dc.contributor.institutionUniversity of Aveiro
dc.contributor.institutionAeronautics Institute of Technology
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionInternational Iberian Nanotechnology Laboratory
dc.date.accessioned2023-03-01T20:34:13Z
dc.date.available2023-03-01T20:34:13Z
dc.date.issued2021-01-01
dc.description.abstractThin-film solar cells have the potential to require only a fraction of the material, and energy in comparison to the widely used silicon cells, deserving attention of the scientific community. Indeed, thin-film solar cells of Cu(In, Ga)Se2 (CIGS) and CZTS offer the highest Schokley-Queisser limit, above to the level achieved with c-Si cells. Besides being essential competitors, CIGS and CZTS solar cells have additional advantages compared to Si cells, such as the possibility of fabricating flexible modules, having a coefficient of temperature lower than the one of Si, a higher response under low irradiance conditions and lower production costs even with low CAPEX investments. Also, all these advantages make CIGS and CZTS technology a compelling candidate for several applications other than flat modules like, for instance, building-integrated PV. The current efficiency for CIGS solar cells is 23.35% and CZTS is 10.0%, and Shockley-Quessey limit is 33% and 32.4%, respectively, so there is still a high potential for the development of the thin-films solar cell architecture.en
dc.description.affiliationi3N and Department of Physics University of Aveiro
dc.description.affiliationPlasmas and Processes Laboratory Aeronautics Institute of Technology
dc.description.affiliationDepartment of Physics Institute of Geosciences and Exact Sciences (IGCE) São Paulo State University “Júlio de Mesquita Filho” (Unesp)
dc.description.affiliationInternational Iberian Nanotechnology Laboratory
dc.description.affiliationUnespDepartment of Physics Institute of Geosciences and Exact Sciences (IGCE) São Paulo State University “Júlio de Mesquita Filho” (Unesp)
dc.format.extent71-100
dc.identifierhttp://dx.doi.org/10.1016/B978-0-12-821592-0.00020-0
dc.identifier.citationSustainable Material Solutions for Solar Energy Technologies: Processing Techniques and Applications, p. 71-100.
dc.identifier.doi10.1016/B978-0-12-821592-0.00020-0
dc.identifier.scopus2-s2.0-85126428880
dc.identifier.urihttp://hdl.handle.net/11449/240820
dc.language.isoeng
dc.relation.ispartofSustainable Material Solutions for Solar Energy Technologies: Processing Techniques and Applications
dc.sourceScopus
dc.subjectAtomic layer deposition
dc.subjectChalcogenide
dc.subjectChalcoperyte
dc.subjectKesterite
dc.subjectSolar cells
dc.titleNovel dielectrics compounds grown by atomic layer deposition as sustainable materials for chalcogenides thin-films photovoltaics technologiesen
dc.typeCapítulo de livro
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Geociências e Ciências Exatas, Rio Claropt
unesp.departmentFísica - IGCEpt

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