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Publicação:
Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

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dc.contributor.authorOliveira, A. V.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.authorSimoen, E.
dc.contributor.authorMitard, J.
dc.contributor.authorWitters, L.
dc.contributor.authorCollaert, N.
dc.contributor.authorClaeys, C.
dc.contributor.institutionUTFPR
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionImec
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKU Leuven
dc.date.accessioned2018-12-11T16:53:35Z
dc.date.available2018-12-11T16:53:35Z
dc.date.issued2018-03-07
dc.description.abstractThe operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.en
dc.description.affiliationUTFPR Campus Toledo
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationImec
dc.description.affiliationUNESP Campus de Sao Joao da Boa Vista
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationUnespUNESP Campus de Sao Joao da Boa Vista
dc.format.extent1-3
dc.identifierhttp://dx.doi.org/10.1109/S3S.2017.8309245
dc.identifier.citation2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, v. 2018-March, p. 1-3.
dc.identifier.doi10.1109/S3S.2017.8309245
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85047777282
dc.identifier.urihttp://hdl.handle.net/11449/171066
dc.language.isoeng
dc.relation.ispartof2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
dc.rights.accessRightsAcesso restritopt
dc.sourceScopus
dc.subjectFinFET
dc.subjectgermanium channel
dc.subjectIon/Ioff ratio
dc.subjectlow temperature
dc.subjectrelaxed
dc.subjectstrained
dc.titleLow temperature influence on long channel STI last process relaxed and strained Ge pFinFETsen
dc.typeTrabalho apresentado em eventopt
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vistapt

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São João da Boa Vista - FESJBV - Faculdade de Engenharia, São João da Boa Vista