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Random Telegraph Signal Noise in Advanced High Performance and Memory Devices

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dc.contributor.authorClaeys, C.
dc.contributor.authorAndrade, M. G. C. de [UNESP]
dc.contributor.authorChai, Z.
dc.contributor.authorFang, W.
dc.contributor.authorGovoreanu, B.
dc.contributor.authorKaczer, B.
dc.contributor.authorZhang, W.
dc.contributor.authorSimoen, E.
dc.contributor.authorIEEE
dc.contributor.institutionImec
dc.contributor.institutionKatholieke Univ Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionLiverpool John Moores Univ
dc.contributor.institutionMicrosyst & Terahertz Res Ctr
dc.contributor.institutionUniv Ghent
dc.date.accessioned2018-11-26T17:16:25Z
dc.date.available2018-11-26T17:16:25Z
dc.date.issued2016-01-01
dc.description.abstractRandom Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.en
dc.description.affiliationImec, Leuven, Belgium
dc.description.affiliationKatholieke Univ Leuven, EE Dept, Leuven, Belgium
dc.description.affiliationUniv Estadual Paulista, Automat & Integrated Syst, Gasi, Sorocaba, Brazil
dc.description.affiliationLiverpool John Moores Univ, EE Dept, Liverpool L3 3AF, Merseyside, England
dc.description.affiliationMicrosyst & Terahertz Res Ctr, Chengdu, Peoples R China
dc.description.affiliationUniv Ghent, Dept Solid State Phys, Ghent, Belgium
dc.description.affiliationUnespUniv Estadual Paulista, Automat & Integrated Syst, Gasi, Sorocaba, Brazil
dc.format.extent6
dc.identifier.citation2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.
dc.identifier.urihttp://hdl.handle.net/11449/162374
dc.identifier.wosWOS:000392469000004
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectrandom telegraph signal
dc.subjecttime lag plot
dc.subjectReRAMs
dc.subjectlow frequency noise
dc.subjectinterface traps
dc.subjectUTBB SOI
dc.subjectoxide traps
dc.titleRandom Telegraph Signal Noise in Advanced High Performance and Memory Devicesen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Ciência e Tecnologia, Sorocabapt
unesp.departmentEngenharia de Controle e Automação - ICTSpt

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Sorocaba - ICTS - Instituto de Ciência e Tecnologia