Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
| dc.contributor.author | Silva, Vanessa C. P. | |
| dc.contributor.author | Wirth, Gilson I. | |
| dc.contributor.author | Martino, João A. | |
| dc.contributor.author | Agopian, Paula G. D. [UNESP] | |
| dc.contributor.institution | Universidade de São Paulo (USP) | |
| dc.contributor.institution | Rio Grande do Sul Federal University | |
| dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
| dc.date.accessioned | 2020-12-12T01:37:52Z | |
| dc.date.available | 2020-12-12T01:37:52Z | |
| dc.date.issued | 2020-01-01 | |
| dc.description.abstract | This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. 3D-numerical simulations were performed as guideline for a trend analysis. The results show a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to a high defect density and high gate oxide electric field accelerating the NBTI effect providing a higher degradation. | en |
| dc.description.affiliation | LSI/PSI/USP University of Sao Paulo | |
| dc.description.affiliation | UFRGS Rio Grande do Sul Federal University | |
| dc.description.affiliation | UNESP Sao Paulo State University | |
| dc.description.affiliationUnesp | UNESP Sao Paulo State University | |
| dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.format.extent | 1-5 | |
| dc.identifier | http://dx.doi.org/10.29292/jics.v15i2.126 | |
| dc.identifier.citation | Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, 2020. | |
| dc.identifier.doi | 10.29292/jics.v15i2.126 | |
| dc.identifier.issn | 1872-0234 | |
| dc.identifier.issn | 1807-1953 | |
| dc.identifier.scopus | 2-s2.0-85090610961 | |
| dc.identifier.uri | http://hdl.handle.net/11449/199368 | |
| dc.language.iso | eng | |
| dc.relation.ispartof | Journal of Integrated Circuits and Systems | |
| dc.source | Scopus | |
| dc.subject | MOSFET | |
| dc.subject | NBTI | |
| dc.subject | NW | |
| dc.subject | SOI | |
| dc.title | Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions | en |
| dc.type | Artigo | |
| dspace.entity.type | Publication |