Publication: Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films
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Date
Advisor
Coadvisor
Graduate program
Undergraduate course
Journal Title
Journal ISSN
Volume Title
Publisher
Trans Tech Publications Ltd
Type
Work presented at event
Access right
Acesso aberto
Abstract
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.
Description
Keywords
Silicon carbon nitride, Thermal annealing, Resistivity, Elastic modulus, Hardness
Language
English
Citation
Materials Science Forum, v. 615 617, p. 327-330.
