Radiative association of C and P, and Si and P atoms
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Undergraduate course
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Wiley-Blackwell
Oxford University Press (OUP)
Oxford University Press (OUP)
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Article
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Abstract
The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 x 10(-18) to 1.62 x 10(-18) cm(3) s(-1) and from 3.73 x 10(-20) to 7.03 x 10(-20) cm(3) s(-1) for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature.
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English
Citation
Monthly Notices of the Royal Astronomical Society. Malden: Wiley-blackwell, v. 372, n. 4, p. 1653-1656, 2006.
