Influence of proton radiation and strain on nFinFET zero temperature coefficient
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This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (VTH) due to the bandgap reduction. Proton radiation degrades gm and decreases VTH mainly for wider fins. We observed experimentally that both parameters (gm and VTH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The VTH influences directly the VZTC in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of VZTC with temperature.
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FinFET, radiation, SOI, strain, Zero Temperature Coefficient
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Inglês
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SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
