Publicação: Analog Linearization of Resistance Temperature Detectors (RTD) Using the Intrinsic Curvature of BandGap Voltage References
dc.contributor.author | Carvalhaes-Dias, P. | |
dc.contributor.author | Ferreira, I. P. | |
dc.contributor.author | Oliveira Morais, F. J. [UNESP] | |
dc.contributor.author | Caparroz Duarte, L. F. | |
dc.contributor.author | Siqueira Dias, J. A. | |
dc.contributor.author | Yurish, S. Y. | |
dc.contributor.institution | Parana Fed Univ Technol | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.contributor.institution | Universidade Estadual de Campinas (UNICAMP) | |
dc.date.accessioned | 2021-06-25T12:18:49Z | |
dc.date.available | 2021-06-25T12:18:49Z | |
dc.date.issued | 2018-01-01 | |
dc.description.abstract | Although resistance temperature detectors (RTD) are more linear than thermocouples, they present second and third order non-linearities, and a linear signal processing circuit which converts the voltage on a Pt-100 RTD to an output voltage with 10 mV/degrees C presents a maximum non-linearity error of 1.07 degrees C (10.7 mV) in the 0 to 85 degrees C temperature range. Although these non-linearities can be corrected digitally, there are cases where a simple analog linearization can be used with advantages. In this work we present an analog linearization technique that uses the output of a conventional Brokaw bandgap cell as the reference voltage of a differential instrumentation amplifier. The intrinsic curvature of the bandgap voltage reference, caused by the non-linear variation with temperature of the VBE of a transistor, creates a compensation voltage that can reduce the non-linearity of the signal processing circuit by one order of magnitude (down to approximately 0.14 degrees C) in the same temperature range. | en |
dc.description.affiliation | Parana Fed Univ Technol, Av Alberto Carazzai, BR-1640 Cornelio Procopio, PR, Brazil | |
dc.description.affiliation | UNESP, Fac Sci & Engn, RD Costa Lopes 780, Tupa, SP, Brazil | |
dc.description.affiliation | Sch Elect & Comp Engn Unicamp, Dept Semicond Instrumentat & Photon, Av Albert Einstein 400, Campinas, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, Fac Sci & Engn, RD Costa Lopes 780, Tupa, SP, Brazil | |
dc.format.extent | 68-71 | |
dc.identifier.citation | Sensors And Electronic Instrumentation Advances (seia'2018). Barcelona: Int Frequency Sensor Assoc-ifsa, p. 68-71, 2018. | |
dc.identifier.uri | http://hdl.handle.net/11449/209444 | |
dc.identifier.wos | WOS:000567303500017 | |
dc.language.iso | eng | |
dc.publisher | Int Frequency Sensor Assoc-ifsa | |
dc.relation.ispartof | Sensors And Electronic Instrumentation Advances (seia'2018) | |
dc.source | Web of Science | |
dc.subject | RTD | |
dc.subject | Bandgap curvature | |
dc.subject | Brokaw cell | |
dc.subject | Linearization | |
dc.subject | Temperature sensors | |
dc.title | Analog Linearization of Resistance Temperature Detectors (RTD) Using the Intrinsic Curvature of BandGap Voltage References | en |
dc.type | Trabalho apresentado em evento | |
dcterms.rightsHolder | Int Frequency Sensor Assoc-ifsa | |
dspace.entity.type | Publication | |
unesp.department | Administração - Tupã | pt |