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Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well

dc.contributor.authorTabata, Américo Sheitiro [UNESP]
dc.contributor.authorOliveira, José Brás Barreto de [UNESP]
dc.contributor.authorPintão, Carlos Alberto Fonzar [UNESP]
dc.contributor.authorda Silva, E. C. F.
dc.contributor.authorLamas, T. E.
dc.contributor.authorDuarte, C. A.
dc.contributor.authorGusev, G. M.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:26:29Z
dc.date.available2014-05-20T13:26:29Z
dc.date.issued2012-01-01
dc.description.abstractIn this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.en
dc.description.affiliationUniv Estadual Paulista, BR-17033360 São Paulo, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, BR-17033360 São Paulo, Brazil
dc.format.extent53-56
dc.identifierhttp://dx.doi.org/10.1016/j.phpro.2012.03.670
dc.identifier.citation15th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012.
dc.identifier.doi10.1016/j.phpro.2012.03.670
dc.identifier.fileWOS000309546800009.pdf
dc.identifier.issn1875-3892
dc.identifier.lattes9354064620643611
dc.identifier.lattes6977466698742311
dc.identifier.urihttp://hdl.handle.net/11449/8535
dc.identifier.wosWOS:000309546800009
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartof15th Brazilian Workshop on Semiconductor Physics
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectsemiconductoren
dc.subjectphotoluminescenceen
dc.subjectparabolic quantum wellen
dc.titleIndirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum wellen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes9354064620643611[1]
unesp.author.lattes6977466698742311
unesp.author.lattes7734568419544588[3]
unesp.author.orcid0000-0001-6059-2798[4]
unesp.author.orcid0000-0003-4001-3108[6]
unesp.author.orcid0000-0002-9389-0238[1]
unesp.author.orcid0000-0002-8900-9946[3]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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