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Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

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dc.contributor.authorBruno-Alfonso, A. [UNESP]
dc.contributor.authorPorras-Montenegro, N.
dc.contributor.authorReyes-Gómez, E.
dc.contributor.authorOliveira, L. E.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidad del Valle
dc.contributor.institutionUniversidad de Antioquia
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-27T11:22:48Z
dc.date.available2014-05-27T11:22:48Z
dc.date.issued2008-03-01
dc.description.abstractWe use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.en
dc.description.affiliationDepto. de Matemática Fac. de Ciências UNESP, Bauru, SP 17033-360
dc.description.affiliationDepartamento de Física Universidad del Valle, AA 25360, Cali
dc.description.affiliationInstituto de Física Universidad de Antioquia, AA 1226, Medellín
dc.description.affiliationInstituto de Física Unicamp, CP 6165, Campinas, SP 13083-970
dc.description.affiliationUnespDepto. de Matemática Fac. de Ciências UNESP, Bauru, SP 17033-360
dc.format.extent1464-1466
dc.identifierhttp://dx.doi.org/10.1016/j.physe.2007.09.145
dc.identifier.citationPhysica E: Low-Dimensional Systems and Nanostructures, v. 40, n. 5, p. 1464-1466, 2008.
dc.identifier.doi10.1016/j.physe.2007.09.145
dc.identifier.issn1386-9477
dc.identifier.scopus2-s2.0-39649096531
dc.identifier.urihttp://hdl.handle.net/11449/70315
dc.language.isoeng
dc.relation.ispartofPhysica E: Low-Dimensional Systems and Nanostructures
dc.relation.ispartofjcr2.399
dc.relation.ispartofsjr0,595
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectDresselhaus
dc.subjectQuantum well
dc.subjectRashba
dc.subjectSpin-splitting
dc.subjectAnisotropy
dc.subjectElectrons
dc.subjectMagnetic fields
dc.subjectDresselhaus spin-splitting
dc.subjectElectron g factor
dc.subjectSemiconductor quantum wells
dc.titleEffect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fieldsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dspace.entity.typePublication
unesp.author.lattes1023310738730000[1]
unesp.author.orcid0000-0002-6194-529X[1]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
unesp.departmentMatemática - FCpt

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