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Topological line defects in graphene for applications in gas sensing

dc.contributor.authorSouza, Fabio A. L. de
dc.contributor.authorAmorim, Rodrigo G.
dc.contributor.authorPrasongkit, Jariyanee
dc.contributor.authorScopel, Wanderla L.
dc.contributor.authorScheicher, Ralph H.
dc.contributor.authorRocha, Alexandre R. [UNESP]
dc.contributor.institutionFed Inst Educ Sci & Technol Espirito Santo
dc.contributor.institutionUniversidade Federal do Espírito Santo (UFES)
dc.contributor.institutionUniversidade Federal Fluminense (UFF)
dc.contributor.institutionNakhon Phanom Univ
dc.contributor.institutionNanotec KKU Ctr Excellence Adv Nanomat Energy Pro
dc.contributor.institutionUppsala Univ
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionMIT
dc.date.accessioned2018-11-26T17:45:10Z
dc.date.available2018-11-26T17:45:10Z
dc.date.issued2018-04-01
dc.description.abstractTopological line defects in graphene synthesized in a highly controlled manner open up new research directions for nanodevice applications. Here, we investigate two types of extended line defects in graphene, namely octagonal/pentagonal and heptagonal/pentagonal reconstructions. A combination of density functional theory and non-equilibrium Green's function methods was utilized in order to explore the application potential of this system as an electronic gas sensor. Our findings show that the electric current is confined to the line defect through gate voltage control, which combined with the enhanced chemical reactivity at the grain boundary, makes this system a highly promising candidate for gas sensor applications. As a proof of principle, we evaluated the sensitivity of a prototypical device toward NO2 molecule, demonstrating that it is indeed possible to reliably detect the target molecule. (C) 2017 Elsevier Ltd. All rights reserved.en
dc.description.affiliationFed Inst Educ Sci & Technol Espirito Santo, Ibatiba, ES, Brazil
dc.description.affiliationUniv Fed Espirito Santo, Dept Fis, Vitoria, ES, Brazil
dc.description.affiliationUniv Fed Fluminense, ICEx, Dept Fis, Volta Redonda, RJ, Brazil
dc.description.affiliationNakhon Phanom Univ, Div Phys, Fac Sci, Nakhon Phanom 48000, Thailand
dc.description.affiliationNanotec KKU Ctr Excellence Adv Nanomat Energy Pro, Khon Kaen 40002, Thailand
dc.description.affiliationUppsala Univ, Dept Phys & Astron, Div Mat Theory, SE-75120 Uppsala, Sweden
dc.description.affiliationUniv Estadual Paulista, Inst Fis Teor, Sao Paulo, Brazil
dc.description.affiliationMIT, Dept Chem Engn, Cambridge, MA 02139 USA
dc.description.affiliationUnespUniv Estadual Paulista, Inst Fis Teor, Sao Paulo, Brazil
dc.description.sponsorshipBrazilian agency FAPES
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipICTP-Simmons Foundation
dc.description.sponsorshipThailand Research Fund
dc.description.sponsorshipNational Nanotechnology Center (NANOTEC), NSTDA, Ministry of Science and Technology, Thailand, through its program of Centers of Excellence Network
dc.description.sponsorshipCarl Tryggers Foundation
dc.description.sponsorshipSwedish Research Council
dc.description.sponsorshipIdFAPESP: 2016/01343-7
dc.description.sponsorshipIdFAPESP: 2015/26862-4
dc.description.sponsorshipIdThailand Research Fund: MRG5980185
dc.format.extent803-808
dc.identifierhttp://dx.doi.org/10.1016/j.carbon.2017.11.029
dc.identifier.citationCarbon. Oxford: Pergamon-elsevier Science Ltd, v. 129, p. 803-808, 2018.
dc.identifier.doi10.1016/j.carbon.2017.11.029
dc.identifier.fileWOS000424885800094.pdf
dc.identifier.issn0008-6223
dc.identifier.urihttp://hdl.handle.net/11449/163844
dc.identifier.wosWOS:000424885800094
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofCarbon
dc.relation.ispartofsjr2,226
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectNanosensor
dc.subjectGraphene
dc.subjectElectronic transport
dc.titleTopological line defects in graphene for applications in gas sensingen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes4785631459929035[6]
unesp.author.orcid0000-0001-8874-6947[6]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Física Teórica (IFT), São Paulopt

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