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Publicação:
Towards an ink-based method for the deposition of ZnxCd1-xS buffer layers in CZTS solar cells

dc.contributor.authorCongiu, Mirko
dc.contributor.authorBonomo, Matteo
dc.contributor.authordi Girolamo, Diego
dc.contributor.authorGraeff, Carlos F. O. [UNESP]
dc.contributor.authorMalerba, Claudia
dc.contributor.authorValentini, Matteo
dc.contributor.authorMittiga, Alberto
dc.contributor.authorDini, Danilo
dc.contributor.institutionUniversity of Rome
dc.contributor.institutionUniversity of Turin
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionENEA Casaccia Research Center
dc.date.accessioned2020-12-12T02:32:51Z
dc.date.available2020-12-12T02:32:51Z
dc.date.issued2020-02-01
dc.description.abstractThis work explores two different deposition methods to grow buffer layers of ZnxCd1−xS for application in kesterite (Cu2ZnSnS4 (CZTS)) solar cells. The introduction of the mixed sulfide of Cd and Zn in CZTS based solar cells represents an important progress due to the improved device performance and minor toxicity with respect to sole CdS. The explored techniques are the chemical bath deposition (CBD) and the precursor ink. For the CBD we focused on the inclusion of zinc into the buffer, i.e. the target solid solution, taking into account the difference in the solubilities of ZnS and CdS. In aqueous solutions the co-deposition process is controlled by various solubility equilibria with CdS precipitation representing the most favorable process. Under these circumstances the ink method here proposed is a promising approach since it is based on the thermal degradation of stable chemical precursors deposited on a dry film. In doing so, the problematic co-deposition of a mixed sulfide derived from sulfides with considerably different solubilities is circumvented. The most important advantages of this approach are the easiness and scalability of the whole process and the reduction of the amounts of toxic reagents/products.en
dc.description.affiliationDepartment of Chemistry University of Rome, La Sapienza”00185 P.zzle Aldo Moro 5
dc.description.affiliationDepartment of Chemistry University of Turin, Via Giuseppe Verdi, 8
dc.description.affiliationUniversity of São Paulo State “UNESP”, Av. Engenheiro Luiz Edmundo Carrijo Coube, 14-01
dc.description.affiliationENEA Casaccia Research Center, via Anguillarese 301
dc.description.affiliationUnespUniversity of São Paulo State “UNESP”, Av. Engenheiro Luiz Edmundo Carrijo Coube, 14-01
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 2016/17302-8
dc.format.extent2575-2582
dc.identifierhttp://dx.doi.org/10.1007/s10854-019-02796-7
dc.identifier.citationJournal of Materials Science: Materials in Electronics, v. 31, n. 3, p. 2575-2582, 2020.
dc.identifier.doi10.1007/s10854-019-02796-7
dc.identifier.issn1573-482X
dc.identifier.issn0957-4522
dc.identifier.scopus2-s2.0-85077591720
dc.identifier.urihttp://hdl.handle.net/11449/201451
dc.language.isoeng
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.sourceScopus
dc.titleTowards an ink-based method for the deposition of ZnxCd1-xS buffer layers in CZTS solar cellsen
dc.typeArtigo
dspace.entity.typePublication
unesp.author.lattes5268607684223281[4]
unesp.author.orcid0000-0001-6541-910X[1]
unesp.author.orcid0000-0003-0162-8273[4]
unesp.departmentFísica - FCpt

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