Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs

We present a critical assessment and discussion of the presence of parasitic source-and-drain series resistance and normal electric field-dependent mobility degradation in un-doped Si nanosheet MOSFETs. A simple explicit Lambert W function-based closed-form model, continuously valid from sub-threshold to strong conduction, was used to clearly describe the transfer characteristics. The model was applied to experimental vertically stacked GAA undoped Si nanosheet MOSFETs using phenomenon-related model parameter values extracted from measured data through suitable numerical optimization procedures. The conducted analysis reveals and ex-plains how these two effects produce analogous deleterious con-sequences on these devices’ transfer characteristics.