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Publicação:
Influence of oxygen atmosphere on LiNbO3 thin films prepared by Pechini process

dc.contributor.authorStojanovic, B. D.
dc.contributor.authorSimões, A. Z. [UNESP]
dc.contributor.authorZaghete, M. A. [UNESP]
dc.contributor.authorSetter, N.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversity of Belgrade
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionSwiss Fed. Institute of Technology
dc.date.accessioned2014-05-27T11:21:07Z
dc.date.available2014-05-27T11:21:07Z
dc.date.issued2004-07-27
dc.description.abstractThin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500°C for 3 hours. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films is discussed.en
dc.description.affiliationDepartment of Materials Center for Multidisciplinary Studies University of Belgrade, Kneza Viseslava la, 11000 Beograd
dc.description.affiliationDepartment of Chemistry Faculty for Chemistry IQ-UNESP, 14800970 Araraquara
dc.description.affiliationEPFL Swiss Fed. Institute of Technology, Lausanne
dc.description.affiliationUnespDepartment of Chemistry Faculty for Chemistry IQ-UNESP, 14800970 Araraquara
dc.format.extent511-514
dc.identifierhttp://dx.doi.org/10.1109/ICMEL.2004.1314875
dc.identifier.citationProceedings of the International Conference on Microelectronics, v. 24 II, p. 511-514.
dc.identifier.doi10.1109/ICMEL.2004.1314875
dc.identifier.lattes3573363486614904
dc.identifier.scopus2-s2.0-3142705080
dc.identifier.urihttp://hdl.handle.net/11449/67803
dc.language.isoeng
dc.relation.ispartofProceedings of the International Conference on Microelectronics
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectAnnealing
dc.subjectChemical vapor deposition
dc.subjectData reduction
dc.subjectEpitaxial growth
dc.subjectFerroelectric materials
dc.subjectGrain boundaries
dc.subjectLithium niobate
dc.subjectMIM devices
dc.subjectPolarization
dc.subjectPositive ions
dc.subjectSol-gels
dc.subjectStoichiometry
dc.subjectTransmission electron microscopy
dc.subjectX ray powder diffraction
dc.subjectAtmosphere flow
dc.subjectElectrooptical
dc.subjectIon distribution
dc.subjectPechini process
dc.subjectThin films
dc.titleInfluence of oxygen atmosphere on LiNbO3 thin films prepared by Pechini processen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dspace.entity.typePublication
unesp.author.lattes3573363486614904
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, Guaratinguetápt
unesp.departmentMateriais e Tecnologia - FEGpt
unesp.departmentFísico-Química - IQARpt

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