Publicação: Low-frequency noise investigation of n-channel 3D devices
Carregando...
Arquivos
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Artigo
Direito de acesso
Acesso aberto
Resumo
In this paper, the low-frequency (LF) noise in standard n-channel triple-gate Bulk FinFETs has been experimentally investigated with variation in the fin widths (W<inf>Fin</inf>), channel lengths (L) and gate dielectric. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in 3D device architectures. Although the device scaling brings the idea of noise reduction, we show the opposite behavior because already single electron trapping has a marked impact on the device operation. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f<sup>2</sup>-like), associated with generation-recombination (GR) noise. In addition, the gate-voltage-dependent GR noise peaks have been studied, which are assigned to gate oxide traps.
Descrição
Palavras-chave
3D devices, Bulk, FinFET, Flicker noise, Generation-recombination noise, Low-frequency noise
Idioma
Inglês
Como citar
Microelectronic Engineering, v. 147, p. 122-125.
