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Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices

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dc.contributor.authorCerra, Sara
dc.contributor.authorPica, Paride
dc.contributor.authorCongiu, Mirko [UNESP]
dc.contributor.authorBoratto, M. H. [UNESP]
dc.contributor.authorGraeff, C. F.O. [UNESP]
dc.contributor.authorFratoddi, Ilaria
dc.contributor.institutionUniversity of Rome Sapienza
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:27:22Z
dc.date.available2020-12-12T01:27:22Z
dc.date.issued2020-08-01
dc.description.abstractA switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many-times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long-term stability over the whole experiment duration (30 days).en
dc.description.affiliationDepartment of Chemistry University of Rome Sapienza, P.le A. Moro 5
dc.description.affiliationPOSMAT – Post-Graduate Program in Materials Science and Technology School of Sciences UNESP – São Paulo State University
dc.description.affiliationDepartment of Physics School of Sciences UNESP – São Paulo State University
dc.description.affiliationUnespPOSMAT – Post-Graduate Program in Materials Science and Technology School of Sciences UNESP – São Paulo State University
dc.description.affiliationUnespDepartment of Physics School of Sciences UNESP – São Paulo State University
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdCAPES: 024/2012
dc.description.sponsorshipIdFAPESP: 2013/07396-7
dc.description.sponsorshipIdFAPESP: 2016/17302-8
dc.description.sponsorshipIdFAPESP: 2017/20809-0
dc.format.extent12083-12088
dc.identifierhttp://dx.doi.org/10.1007/s10854-020-03753-5
dc.identifier.citationJournal of Materials Science: Materials in Electronics, v. 31, n. 15, p. 12083-12088, 2020.
dc.identifier.doi10.1007/s10854-020-03753-5
dc.identifier.issn1573-482X
dc.identifier.issn0957-4522
dc.identifier.scopus2-s2.0-85086403461
dc.identifier.urihttp://hdl.handle.net/11449/198979
dc.language.isoeng
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.sourceScopus
dc.titleGold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devicesen
dc.typeArtigopt
dspace.entity.typePublication
unesp.author.lattes5268607684223281[5]
unesp.author.orcid0000-0001-6541-910X[3]
unesp.author.orcid0000-0003-0162-8273[5]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt

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