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Formation of SiC by radiative association

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dc.contributor.authorAndreazza, C. M. [UNESP]
dc.contributor.authorVichietti, R. M. [UNESP]
dc.contributor.authorMarinho, E. P. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2013-09-30T18:50:35Z
dc.date.accessioned2014-05-20T14:16:25Z
dc.date.available2013-09-30T18:50:35Z
dc.date.available2014-05-20T14:16:25Z
dc.date.issued2009-12-21
dc.description.abstractRate coefficients for radiative association of silicon and carbon atoms to form silicon carbide molecule (SiC) are estimated. The radiative association of Si(3P) and C(3P) atoms mainly occurs through the C3 Pi state followed by radiative decay to the X3 Pi state. For the temperature range of 300-14 000 K, the rate coefficients slowly increase with temperature and they can be expressed by K(T) = 2.038 x 10-17(T/300)-0.01263 exp(-136.73/T) cm3 s-1.en
dc.description.affiliationUniv Estadual Paulista, IGCE, DEMAC, BR-13500230 Rio Claro, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, IGCE, DEMAC, BR-13500230 Rio Claro, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.format.extent1892-1896
dc.identifierhttp://dx.doi.org/10.1111/j.1365-2966.2009.15589.x
dc.identifier.citationMonthly Notices of The Royal Astronomical Society. Malden: Wiley-blackwell Publishing, Inc, v. 400, n. 4, p. 1892-1896, 2009.
dc.identifier.doi10.1111/j.1365-2966.2009.15589.x
dc.identifier.fileWOS000272532100022.pdf
dc.identifier.issn0035-8711
dc.identifier.lattes6915586041935129
dc.identifier.lattes4276078473559775
dc.identifier.urihttp://hdl.handle.net/11449/24945
dc.identifier.wosWOS:000272532100022
dc.language.isoeng
dc.publisherWiley-Blackwell Publishing, Inc
dc.relation.ispartofMonthly Notices of the Royal Astronomical Society
dc.relation.ispartofjcr5.194
dc.relation.ispartofsjr2,346
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectatomic dataen
dc.subjectatomic processen
dc.subjectcircumstellar matteren
dc.subjectISM: moleculesen
dc.titleFormation of SiC by radiative associationen
dc.typeArtigo
dcterms.licensehttp://www.oxfordjournals.org/access_purchase/self-archiving_policyp.html
dcterms.rightsHolderWiley-blackwell Publishing, Inc
dspace.entity.typePublication
unesp.author.lattes6915586041935129[1]
unesp.author.lattes4276078473559775
unesp.author.orcid0000-0002-7413-0161[3]
unesp.author.orcid0000-0002-2313-2116[2]
unesp.author.orcid0000-0002-4948-9471[1]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Geociências e Ciências Exatas, Rio Claropt
unesp.departmentEstatística, Matemática Aplicada e Computação - IGCEpt

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Rio Claro - IGCE - Instituto de Geociências e Ciências Exatas