Publicação: Defect structure in nitrogen-rich amorphous silicon nitride films
Carregando...
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Artigo
Direito de acesso
Resumo
Electron spin resonance and photoluminescence measurements were carried out on nitrogen-rich, hydrogenated amorphous silicon-nitride films. Paramagnetic Si dangling bonds (K0 centers) are found in as-deposited films only after UV illumination. High temperature post-deposition annealing, followed by UV illumination, creates ESR-active, two-fold coordinated nitrogen dangling bonds (N02 centers). These two types of spin center are normally observed at room temperature. An extra component appears on the ESR spectrum measured at low temperature (6 K) for the as-deposited samples after UV illumination, at which temperature the line of the K0 center is saturated by microwave power. This component is tentatively attributed to N02 centers that are partially saturated. The photoluminescence efficiency is significantly decreased by the high temperature annealing. © 1998 Elsevier Science B.V. All rights reserved.
Descrição
Palavras-chave
a-SiNx:H films, K center, N02 center
Idioma
Inglês
Como citar
Journal of Non-Crystalline Solids, v. 227-230, n. PART 1, p. 528-532, 1998.
