Double gate tunnel-FET working like a permittivity based biosensor with different drain to gate and drain to biomaterial alignments

Abstract

The goal of this work is to analyze the effect of the drain to gate and to biomaterial alignments on n-type Tunnel-FET (nTFET) working like a permittivity based biosensor. The biomaterial over the drain and channel region influence through the different dielectric permittivity material (k, where ε = k∗ε0) in the sensing area. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices (Bio-TFET) for transistors with the drain to gate underlap (LUD) of 27 nm and with minimum drain to biomaterial overlap (Lover = 0) region.