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Electron field emission from boron doped microcrystalline diamond

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dc.contributor.authorRoos, M.
dc.contributor.authorBaranauskas, V
dc.contributor.authorFontana, M.
dc.contributor.authorCeragioli, H. J.
dc.contributor.authorPeterlevitz, A. C.
dc.contributor.authorMallik, K.
dc.contributor.authorDegasperi, F. T.
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionUniv Southampton
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:29:57Z
dc.date.available2014-05-20T15:29:57Z
dc.date.issued2007-07-15
dc.description.abstractField emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N-B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E-th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm(-2) were obtained using electric fields less than 8 V/mu m. (c) 2007 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv Estadual Campinas, Dept Semicond Instrumentos & Foton, Fac Elect & Comp Engn, BR-13083852 Campinas, Brazil
dc.description.affiliationUniv Southampton, Sch Elect & Comp Sci, Nanoscale Syst Integrat Grp, Southampton SO17 1BJ, Hants, England
dc.description.affiliationUNESP, CEETEPS, FATEC SP, Fac Tecnol São Paulo, BR-01124060 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUNESP, CEETEPS, FATEC SP, Fac Tecnol São Paulo, BR-01124060 Sao Carlos, SP, Brazil
dc.format.extent7381-7386
dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2007.03.023
dc.identifier.citationApplied Surface Science. Amsterdam: Elsevier B.V., v. 253, n. 18, p. 7381-7386, 2007.
dc.identifier.doi10.1016/j.apsusc.2007.03.023
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/11449/39417
dc.identifier.wosWOS:000247863800006
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofApplied Surface Science
dc.relation.ispartofjcr4.439
dc.relation.ispartofsjr1,093
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectboron doped diamond surfacept
dc.subjectelectron field emissionpt
dc.subjectchemical vapor deposited diamondpt
dc.subjectthreshold field for electron emissionpt
dc.subjectemission properties of surface sitespt
dc.titleElectron field emission from boron doped microcrystalline diamonden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.orcid0000-0001-9917-5887[3]
unesp.author.orcid0000-0003-2568-9556[6]

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